Advances in III-V semiconductor nanowires and nanodevices / edited by Jianye Li, Deli Wang, Ray R. LaPierre.
2011
TK7871.85 .A38 2011eb
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Title
Advances in III-V semiconductor nanowires and nanodevices / edited by Jianye Li, Deli Wang, Ray R. LaPierre.
ISBN
9781608050529 (electronic bk.)
1608050521 (electronic bk.)
1608050521 (electronic bk.)
Imprint
[Oak Park, Ill.?] : Bentham eBooks, [2011]
Language
English
Description
1 online resource (vi, 178 pages) : illustrations (chiefly color)
Call Number
TK7871.85 .A38 2011eb
System Control No.
(OCoLC)769188168
Summary
Annotation Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest for next generation optoelectronic devices including transistors, light emitting diodes, lasers, photodetectors, and solar cells. Advances in III-V Semiconductor Nanowires and Nanodevices is an account of recent progress in the synthesis, characterization, physical properties, device fabrication, and applications of binary compound and ternary alloy III-V semiconductor nanowires. Each chapter is prepared by renowned experts in the field, describing the current state of knowledge and key areas of research. The book is written at the expert level, but also serves as a guide for researchers or graduate students aiming to enter semiconductor research.
Note
Annotation Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest for next generation optoelectronic devices including transistors, light emitting diodes, lasers, photodetectors, and solar cells. Advances in III-V Semiconductor Nanowires and Nanodevices is an account of recent progress in the synthesis, characterization, physical properties, device fabrication, and applications of binary compound and ternary alloy III-V semiconductor nanowires. Each chapter is prepared by renowned experts in the field, describing the current state of knowledge and key areas of research. The book is written at the expert level, but also serves as a guide for researchers or graduate students aiming to enter semiconductor research.
Bibliography, etc. Note
Includes bibliographical references and indexes.
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