Intro
1 Introduction
2 Zincblende III-V semiconductors
2.2 Zincblende crystal structure
2.3 Point defects in III-V semiconductors
2.4 III-V semiconductors and optoelectronics
3 MOVPE growth of III-V compounds
3.1 Introductory remarks on the MOVPE technique
3.2 Planetary reactors AIX2400G3 and AIX2800G4
3.3 Precursors selected for the experimental work
3.4 Dopants and impurities incorporation
4 In-situ etching with CBr4
4.1 Motivation for in-situ etching
4.2 Pre-existing research on in-situ etching
4.3 Investigation of CBr4 etching of GaAs

4.4 Investigation of CBr4 etching of GaAs assisted with TMGa and TMAl
4.5 CBr4 etching of AlGaAs and GaInP
5 SG-DBR tunable lasers
5.1 Chapter introduction
5.2 SG-DBR lasers
5.3 Thermally tuned SG-DBR lasers
5.4 Investigation of electronic tuning
6 Buried-mesa broad-area lasers
6.1 Chapter introduction
6.2 High-power lasers
6.3 Structure and process
6.4 Results and discussion
6.5 Chapter summary and conclusions
7 Lasers with buried implantation
7.1 Chapter introduction
7.2 Ion implantation
7.3 Device description and fabrication procedure

7.4 Material characterization
7.5 Characterization of as-cleaved devices
7.6 Characterization of coated and mounted devices
7.7 Step-stress tests
7.8 Chapter summary and conclusions
8 Summary and outlook
A1 Zincblende III-V semiconductors and related properties
A1.1 Appendix content
A1.2 Composition, bonding and related properties
A1.3 Crystal structure
A1.4 Ternary and higher order compounds
A1.5 Epitaxial multilayers: mismatch, strain, relaxation
A1.6 Defects
A1.7 Electronic structure and related properties
A1.8 Carrier transport